AO4452 100v n-channel mosfet sdmos tm general description product summary v ds i d (at v gs =10v) 8a r ds(on) (at v gs =10v) < 25m w r ds(on) (at v gs = 7v) < 31m w 100% uis tested 100% r g tested the AO4452 is fabricated with sdmos tm trench technology that combines excellent r ds(on) with low gate charge.the result is outstanding efficiency with co ntrolled switching behavior. this universal technology is we ll suited for pwm, load switching and general purpose applications. 100v d soic-8 top view bottom view d d d d symbol v ds v gs i dm i ar e ar t j , t stg symbol t 10s steady-state steady-state r q jl 2 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics w 3.1 units parameter typ max c/w r q ja 31 59 40 maximum junction-to-ambient a v 25 gate-source voltage drain-source voltage 100 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted mj avalanche current c 39 a 28 a i d 8 6.5 57 t a =25c t a =70c power dissipation b p d repetitive avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 g s s s s g rev 3: may 2012 www.aosmd.com page 1 of 6
AO4452 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 10 t j =55c 50 i gss 100 na v gs(th) gate threshold voltage 2 3.2 4 v i d(on) 60 a 20.5 25 t j =125c 36 43 25 31 m w g fs 23 s v sd 0.66 1 v i s 5 a c iss 1400 1770 2200 pf c oss 115 165 215 pf c rss 33 55 80 pf r g 0.3 0.65 1.0 w forward transconductance diode forward voltage v gs =0v, v ds =50v, f=1mhz dynamic parameters reverse transfer capacitance m a v ds =v gs i d =250 m a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current m w maximum body-diode continuous current input capacitance v gs =10v, i d =8a r ds(on) static drain-source on-resistance i dss gate resistance v gs =0v, v ds =0v, f=1mhz output capacitance i s =1a,v gs =0v v ds =5v, i d =8a v gs =7v, i d =6.5a switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v q g (10v) 14 28 42 nc q gs 4 9 14 nc q gd 6 10 14 nc t d(on) 12 ns t r 4 ns t d(off) 17 ns t f 5 ns t rr 11 16 21 ns q rr 42 60 78 nc t rr 21 27 33 ns q rr 20 28 36 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =8a, di/dt=100a/ m s body diode reverse recovery charge i f =8a, di/dt=500a/ m s turn-on delaytime v gs =10v, v ds =50v, r l =6 w , r gen =3 w i f =8a, di/dt=500a/ m s body diode reverse recovery time i f =8a, di/dt=100a/ m s total gate charge v gs =10v, v ds =50v, i d =8a gate source charge gate drain charge turn-off delaytime turn-on rise time turn-off fall time switching parameters body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 3: may 2012 www.aosmd.com page 2 of 6
AO4452 typical electrical and thermal characteristics 17 52 10 0 10 20 30 40 50 60 3 4 5 6 7 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 20 25 30 35 40 r ds(on) (m w ww w ) 1 . 2 1.4 1.6 1.8 2 2.2 normalized on -resistance v gs =10v i d =8a 25 c 125 c v ds =5v v gs =7v v gs =10v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =6v 8v 7v 10v 6.5v 10 0 18 40 10 15 20 0 6 12 18 24 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1 . 2 0 25 50 75 100 125 150 175 normalized on temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =7v i d =6.5a 15 20 25 30 35 40 45 6 7 8 9 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8a 25 c 125 c rev 3: may 2012 www.aosmd.com page 3 of 6
AO4452 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =50v i d =8a 100 (a) peak avalanche current t a =25 c t = 150 c t a =100 c 1.0 10.0 100.0 i d (amps) 10 m s 1 ms r ds(on) limited 100 m s 10 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c) t a = 150 c t a =125 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) t a =25 c 0.0 0.1 0.01 0.1 1 10 100 v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 s dc t j(max) =150 c t a =25 c 10ms rev 3: may 2012 www.aosmd.com page 4 of 6
AO4452 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w 6 9 12 15 150 200 250 300 i rm (a) q rr (nc) di/dt=800a/ m s 125oc 125oc 25oc i rm 0.8 1.2 1.6 2 8 12 16 20 24 s t rr (ns) di/dt=800a/ m s 125oc 25 oc t rr 40 0 3 50 100 0 5 10 15 20 25 30 i s (a) figure 13: diode reverse recovery charge and peak current vs. conduction current 25 oc q rr -2 2 6 10 14 18 22 26 30 0 30 60 90 120 150 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 15: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 0.4 0 4 8 0 5 10 15 20 25 30 i s (a) figure 14: diode reverse recovery time and softness factor vs. conduction current 125 oc 25 oc s 0 1 2 3 0 5 10 15 20 25 30 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 16: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 125oc i s =20a t rr s 25oc rev 3: may 2012 www.aosmd.com page 5 of 6
AO4452 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms vgs vgs t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 3: may 2012 www.aosmd.com page 6 of 6
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